This paper studied the stress generation in the deposition process of multilayer polycrystalline films by physical vapor deposition. A stress prediction model was proposed which is capable of describing the generation of both the intrinsic stress and thermal stress by analyzing heat/mass transfer and growth process during the deposition process. An alternative deposition of Cu and Ag layers on Si (100) was simulated. The thermal stress in the multilayer system was discussed in detail by analyzing the influence of different parameters on thermal stress, such as deposition temperature and film thickness. It is found that the thermal residual stress strongly depends on the deposition temperature and film thickness ratio and thus the thermal stress can be modified by adjusting the related parameters.

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